diff options
| author | Brian Norris <norris@broadcom.com> | 2010-08-20 10:50:43 -0700 |
|---|---|---|
| committer | David Woodhouse <David.Woodhouse@intel.com> | 2010-10-24 23:43:44 +0100 |
| commit | 34c5bf6cc78e56537e0d508f5979f27ea8a64e31 (patch) | |
| tree | 8fcd9a81d5317f92e3ac5268deee49e87b638a78 | |
| parent | eea116ed0497dc9c4a981b8c7017d758fc835ded (diff) | |
mtd: nand: Samsung MLC - new OOB sizes
There are some additions to the detection scheme used by Samsung
MLC NAND. These simple changes to support the 400- and 436-byte OOB
are found in the following data sheet:
Samsung K9GBG08U0M (p.40)
Signed-off-by: Brian Norris <norris@broadcom.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
| -rw-r--r-- | drivers/mtd/nand/nand_base.c | 17 |
1 files changed, 15 insertions, 2 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index 1ae953c4ecc..596ac848b46 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -2859,7 +2859,7 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, /* * Field definitions are in the following datasheets: * Old style (4,5 byte ID): Samsung K9GAG08U0M (p.32) - * New style (6 byte ID): Samsung K9GAG08U0D (p.40) + * New style (6 byte ID): Samsung K9GBG08U0M (p.40) * * Check for wraparound + Samsung ID + nonzero 6th byte * to decide what to do. @@ -2872,7 +2872,20 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, mtd->writesize = 2048 << (extid & 0x03); extid >>= 2; /* Calc oobsize */ - mtd->oobsize = (extid & 0x03) == 0x01 ? 128 : 218; + switch (extid & 0x03) { + case 1: + mtd->oobsize = 128; + break; + case 2: + mtd->oobsize = 218; + break; + case 3: + mtd->oobsize = 400; + break; + default: + mtd->oobsize = 436; + break; + } extid >>= 2; /* Calc blocksize */ mtd->erasesize = (128 * 1024) << |