[MTD] NAND: Clean up trailing white spaces

Signed-off-by: Thomas Gleixner <tglx@linutronix.de>

1 files changed, 15 insertions, 15 deletions

diff --git a/drivers/mtd/nand/nand_ids.c b/drivers/mtd/nand/nand_ids.c
index efe246961b6..dbc7e55a424 100644
--- a/drivers/mtd/nand/nand_ids.c
+++ b/drivers/mtd/nand/nand_ids.c
@@ -3,7 +3,7 @@
  *
  *  Copyright (C) 2002 Thomas Gleixner (tglx@linutronix.de)
  *
- * $Id: nand_ids.c,v 1.14 2005/06/23 09:38:50 gleixner Exp $
+ * $Id: nand_ids.c,v 1.16 2005/11/07 11:14:31 gleixner Exp $
  *
  * This program is free software; you can redistribute it and/or modify
  * it under the terms of the GNU General Public License version 2 as
@@ -14,14 +14,14 @@
 #include <linux/mtd/nand.h>
 /*
 *	Chip ID list
-*	
+*
 *	Name. ID code, pagesize, chipsize in MegaByte, eraseblock size,
 *	options
-* 
+*
 * 	Pagesize; 0, 256, 512
 *	0 	get this information from the extended chip ID
 +	256	256 Byte page size
-*	512	512 Byte page size	
+*	512	512 Byte page size
 */
 struct nand_flash_dev nand_flash_ids[] = {
 	{"NAND 1MiB 5V 8-bit", 		0x6e, 256, 1, 0x1000, 0},
@@ -34,27 +34,27 @@ struct nand_flash_dev nand_flash_ids[] = {
 	{"NAND 4MiB 3,3V 8-bit", 	0xe3, 512, 4, 0x2000, 0},
 	{"NAND 4MiB 3,3V 8-bit", 	0xe5, 512, 4, 0x2000, 0},
 	{"NAND 8MiB 3,3V 8-bit", 	0xd6, 512, 8, 0x2000, 0},
-	
+
 	{"NAND 8MiB 1,8V 8-bit", 	0x39, 512, 8, 0x2000, 0},
 	{"NAND 8MiB 3,3V 8-bit", 	0xe6, 512, 8, 0x2000, 0},
 	{"NAND 8MiB 1,8V 16-bit", 	0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16},
 	{"NAND 8MiB 3,3V 16-bit", 	0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16},
-	
+
 	{"NAND 16MiB 1,8V 8-bit", 	0x33, 512, 16, 0x4000, 0},
 	{"NAND 16MiB 3,3V 8-bit", 	0x73, 512, 16, 0x4000, 0},
 	{"NAND 16MiB 1,8V 16-bit", 	0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16},
 	{"NAND 16MiB 3,3V 16-bit", 	0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16},
-	
+
 	{"NAND 32MiB 1,8V 8-bit", 	0x35, 512, 32, 0x4000, 0},
 	{"NAND 32MiB 3,3V 8-bit", 	0x75, 512, 32, 0x4000, 0},
 	{"NAND 32MiB 1,8V 16-bit", 	0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16},
 	{"NAND 32MiB 3,3V 16-bit", 	0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16},
-	
+
 	{"NAND 64MiB 1,8V 8-bit", 	0x36, 512, 64, 0x4000, 0},
 	{"NAND 64MiB 3,3V 8-bit", 	0x76, 512, 64, 0x4000, 0},
 	{"NAND 64MiB 1,8V 16-bit", 	0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16},
 	{"NAND 64MiB 3,3V 16-bit", 	0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16},
-	
+
 	{"NAND 128MiB 1,8V 8-bit", 	0x78, 512, 128, 0x4000, 0},
 	{"NAND 128MiB 1,8V 8-bit", 	0x39, 512, 128, 0x4000, 0},
 	{"NAND 128MiB 3,3V 8-bit", 	0x79, 512, 128, 0x4000, 0},
@@ -62,7 +62,7 @@ struct nand_flash_dev nand_flash_ids[] = {
 	{"NAND 128MiB 1,8V 16-bit", 	0x49, 512, 128, 0x4000, NAND_BUSWIDTH_16},
 	{"NAND 128MiB 3,3V 16-bit", 	0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16},
 	{"NAND 128MiB 3,3V 16-bit", 	0x59, 512, 128, 0x4000, NAND_BUSWIDTH_16},
-	
+
 	{"NAND 256MiB 3,3V 8-bit", 	0x71, 512, 256, 0x4000, 0},
 
 	/* These are the new chips with large page size. The pagesize
@@ -73,7 +73,7 @@ struct nand_flash_dev nand_flash_ids[] = {
 	{"NAND 64MiB 3,3V 8-bit", 	0xF2, 0,  64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
 	{"NAND 64MiB 1,8V 16-bit", 	0xB2, 0,  64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
 	{"NAND 64MiB 3,3V 16-bit", 	0xC2, 0,  64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
-	
+
 	/* 1 Gigabit */
 	{"NAND 128MiB 1,8V 8-bit", 	0xA1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
 	{"NAND 128MiB 3,3V 8-bit", 	0xF1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
@@ -85,13 +85,13 @@ struct nand_flash_dev nand_flash_ids[] = {
 	{"NAND 256MiB 3,3V 8-bit", 	0xDA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
 	{"NAND 256MiB 1,8V 16-bit", 	0xBA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
 	{"NAND 256MiB 3,3V 16-bit", 	0xCA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
-	
+
 	/* 4 Gigabit */
 	{"NAND 512MiB 1,8V 8-bit", 	0xAC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
 	{"NAND 512MiB 3,3V 8-bit", 	0xDC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
 	{"NAND 512MiB 1,8V 16-bit", 	0xBC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
 	{"NAND 512MiB 3,3V 16-bit", 	0xCC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
-	
+
 	/* 8 Gigabit */
 	{"NAND 1GiB 1,8V 8-bit", 	0xA3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
 	{"NAND 1GiB 3,3V 8-bit", 	0xD3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR},
@@ -104,11 +104,11 @@ struct nand_flash_dev nand_flash_ids[] = {
 	{"NAND 2GiB 1,8V 16-bit", 	0xB5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
 	{"NAND 2GiB 3,3V 16-bit", 	0xC5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR},
 
-	/* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout ! 
+	/* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout !
 	 * The chosen minimum erasesize is 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page planes
 	 * 1 block = 2 pages, but due to plane arrangement the blocks 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7
 	 * Anyway JFFS2 would increase the eraseblock size so we chose a combined one which can be erased in one go
-	 * There are more speed improvements for reads and writes possible, but not implemented now 
+	 * There are more speed improvements for reads and writes possible, but not implemented now
 	 */
 	{"AND 128MiB 3,3V 8-bit",	0x01, 2048, 128, 0x4000, NAND_IS_AND | NAND_NO_AUTOINCR | NAND_4PAGE_ARRAY | BBT_AUTO_REFRESH},