Merge branch 'perf/core' into perf/uprobes

Merge in latest upstream (and the latest perf development tree),
to prepare for tooling changes, and also to pick up v3.4 MM
changes that the uprobes code needs to take care of.

Signed-off-by: Ingo Molnar <mingo@kernel.org>

1 files changed, 133 insertions, 52 deletions

diff --git a/include/linux/edac.h b/include/linux/edac.h
index 1cd3947987e..c621d762bb2 100644
--- a/include/linux/edac.h
+++ b/include/linux/edac.h
@@ -13,7 +13,11 @@
 #define _LINUX_EDAC_H_
 
 #include <linux/atomic.h>
-#include <linux/device.h>
+#include <linux/kobject.h>
+#include <linux/completion.h>
+#include <linux/workqueue.h>
+
+struct device;
 
 #define EDAC_OPSTATE_INVAL	-1
 #define EDAC_OPSTATE_POLL	0
@@ -66,25 +70,64 @@ enum dev_type {
 #define DEV_FLAG_X32		BIT(DEV_X32)
 #define DEV_FLAG_X64		BIT(DEV_X64)
 
-/* memory types */
+/**
+ * enum mem_type - memory types. For a more detailed reference, please see
+ *			http://en.wikipedia.org/wiki/DRAM
+ *
+ * @MEM_EMPTY		Empty csrow
+ * @MEM_RESERVED:	Reserved csrow type
+ * @MEM_UNKNOWN:	Unknown csrow type
+ * @MEM_FPM:		FPM - Fast Page Mode, used on systems up to 1995.
+ * @MEM_EDO:		EDO - Extended data out, used on systems up to 1998.
+ * @MEM_BEDO:		BEDO - Burst Extended data out, an EDO variant.
+ * @MEM_SDR:		SDR - Single data rate SDRAM
+ *			http://en.wikipedia.org/wiki/Synchronous_dynamic_random-access_memory
+ *			They use 3 pins for chip select: Pins 0 and 2 are
+ *			for rank 0; pins 1 and 3 are for rank 1, if the memory
+ *			is dual-rank.
+ * @MEM_RDR:		Registered SDR SDRAM
+ * @MEM_DDR:		Double data rate SDRAM
+ *			http://en.wikipedia.org/wiki/DDR_SDRAM
+ * @MEM_RDDR:		Registered Double data rate SDRAM
+ *			This is a variant of the DDR memories.
+ *			A registered memory has a buffer inside it, hiding
+ *			part of the memory details to the memory controller.
+ * @MEM_RMBS:		Rambus DRAM, used on a few Pentium III/IV controllers.
+ * @MEM_DDR2:		DDR2 RAM, as described at JEDEC JESD79-2F.
+ *			Those memories are labed as "PC2-" instead of "PC" to
+ *			differenciate from DDR.
+ * @MEM_FB_DDR2:	Fully-Buffered DDR2, as described at JEDEC Std No. 205
+ *			and JESD206.
+ *			Those memories are accessed per DIMM slot, and not by
+ *			a chip select signal.
+ * @MEM_RDDR2:		Registered DDR2 RAM
+ *			This is a variant of the DDR2 memories.
+ * @MEM_XDR:		Rambus XDR
+ *			It is an evolution of the original RAMBUS memories,
+ *			created to compete with DDR2. Weren't used on any
+ *			x86 arch, but cell_edac PPC memory controller uses it.
+ * @MEM_DDR3:		DDR3 RAM
+ * @MEM_RDDR3:		Registered DDR3 RAM
+ *			This is a variant of the DDR3 memories.
+ */
 enum mem_type {
-	MEM_EMPTY = 0,		/* Empty csrow */
-	MEM_RESERVED,		/* Reserved csrow type */
-	MEM_UNKNOWN,		/* Unknown csrow type */
-	MEM_FPM,		/* Fast page mode */
-	MEM_EDO,		/* Extended data out */
-	MEM_BEDO,		/* Burst Extended data out */
-	MEM_SDR,		/* Single data rate SDRAM */
-	MEM_RDR,		/* Registered single data rate SDRAM */
-	MEM_DDR,		/* Double data rate SDRAM */
-	MEM_RDDR,		/* Registered Double data rate SDRAM */
-	MEM_RMBS,		/* Rambus DRAM */
-	MEM_DDR2,		/* DDR2 RAM */
-	MEM_FB_DDR2,		/* fully buffered DDR2 */
-	MEM_RDDR2,		/* Registered DDR2 RAM */
-	MEM_XDR,		/* Rambus XDR */
-	MEM_DDR3,		/* DDR3 RAM */
-	MEM_RDDR3,		/* Registered DDR3 RAM */
+	MEM_EMPTY = 0,
+	MEM_RESERVED,
+	MEM_UNKNOWN,
+	MEM_FPM,
+	MEM_EDO,
+	MEM_BEDO,
+	MEM_SDR,
+	MEM_RDR,
+	MEM_DDR,
+	MEM_RDDR,
+	MEM_RMBS,
+	MEM_DDR2,
+	MEM_FB_DDR2,
+	MEM_RDDR2,
+	MEM_XDR,
+	MEM_DDR3,
+	MEM_RDDR3,
 };
 
 #define MEM_FLAG_EMPTY		BIT(MEM_EMPTY)
@@ -162,8 +205,9 @@ enum scrub_type {
 #define OP_OFFLINE		0x300
 
 /*
- * There are several things to be aware of that aren't at all obvious:
+ * Concepts used at the EDAC subsystem
  *
+ * There are several things to be aware of that aren't at all obvious:
  *
  * SOCKETS, SOCKET SETS, BANKS, ROWS, CHIP-SELECT ROWS, CHANNELS, etc..
  *
@@ -172,36 +216,61 @@ enum scrub_type {
  * creating a common ground for discussion, terms and their definitions
  * will be established.
  *
- * Memory devices:	The individual chip on a memory stick.  These devices
- *			commonly output 4 and 8 bits each.  Grouping several
- *			of these in parallel provides 64 bits which is common
- *			for a memory stick.
+ * Memory devices:	The individual DRAM chips on a memory stick.  These
+ *			devices commonly output 4 and 8 bits each (x4, x8).
+ *			Grouping several of these in parallel provides the
+ *			number of bits that the memory controller expects:
+ *			typically 72 bits, in order to provide 64 bits +
+ *			8 bits of ECC data.
  *
  * Memory Stick:	A printed circuit board that aggregates multiple
- *			memory devices in parallel.  This is the atomic
- *			memory component that is purchaseable by Joe consumer
- *			and loaded into a memory socket.
+ *			memory devices in parallel.  In general, this is the
+ *			Field Replaceable Unit (FRU) which gets replaced, in
+ *			the case of excessive errors. Most often it is also
+ *			called DIMM (Dual Inline Memory Module).
+ *
+ * Memory Socket:	A physical connector on the motherboard that accepts
+ *			a single memory stick. Also called as "slot" on several
+ *			datasheets.
  *
- * Socket:		A physical connector on the motherboard that accepts
- *			a single memory stick.
+ * Channel:		A memory controller channel, responsible to communicate
+ *			with a group of DIMMs. Each channel has its own
+ *			independent control (command) and data bus, and can
+ *			be used independently or grouped with other channels.
  *
- * Channel:		Set of memory devices on a memory stick that must be
- *			grouped in parallel with one or more additional
- *			channels from other memory sticks.  This parallel
- *			grouping of the output from multiple channels are
- *			necessary for the smallest granularity of memory access.
- *			Some memory controllers are capable of single channel -
- *			which means that memory sticks can be loaded
- *			individually.  Other memory controllers are only
- *			capable of dual channel - which means that memory
- *			sticks must be loaded as pairs (see "socket set").
+ * Branch:		It is typically the highest hierarchy on a
+ *			Fully-Buffered DIMM memory controller.
+ *			Typically, it contains two channels.
+ *			Two channels at the same branch can be used in single
+ *			mode or in lockstep mode.
+ *			When lockstep is enabled, the cacheline is doubled,
+ *			but it generally brings some performance penalty.
+ *			Also, it is generally not possible to point to just one
+ *			memory stick when an error occurs, as the error
+ *			correction code is calculated using two DIMMs instead
+ *			of one. Due to that, it is capable of correcting more
+ *			errors than on single mode.
  *
- * Chip-select row:	All of the memory devices that are selected together.
- *			for a single, minimum grain of memory access.
- *			This selects all of the parallel memory devices across
- *			all of the parallel channels.  Common chip-select rows
- *			for single channel are 64 bits, for dual channel 128
- *			bits.
+ * Single-channel:	The data accessed by the memory controller is contained
+ *			into one dimm only. E. g. if the data is 64 bits-wide,
+ *			the data flows to the CPU using one 64 bits parallel
+ *			access.
+ *			Typically used with SDR, DDR, DDR2 and DDR3 memories.
+ *			FB-DIMM and RAMBUS use a different concept for channel,
+ *			so this concept doesn't apply there.
+ *
+ * Double-channel:	The data size accessed by the memory controller is
+ *			interlaced into two dimms, accessed at the same time.
+ *			E. g. if the DIMM is 64 bits-wide (72 bits with ECC),
+ *			the data flows to the CPU using a 128 bits parallel
+ *			access.
+ *
+ * Chip-select row:	This is the name of the DRAM signal used to select the
+ *			DRAM ranks to be accessed. Common chip-select rows for
+ *			single channel are 64 bits, for dual channel 128 bits.
+ *			It may not be visible by the memory controller, as some
+ *			DIMM types have a memory buffer that can hide direct
+ *			access to it from the Memory Controller.
  *
  * Single-Ranked stick:	A Single-ranked stick has 1 chip-select row of memory.
  *			Motherboards commonly drive two chip-select pins to
@@ -214,8 +283,8 @@ enum scrub_type {
  *
  * Double-sided stick:	DEPRECATED TERM, see Double-Ranked stick.
  *			A double-sided stick has two chip-select rows which
- *			access different sets of memory devices.  The two
- *			rows cannot be accessed concurrently.  "Double-sided"
+ *			access different sets of memory devices. The two
+ *			rows cannot be accessed concurrently. "Double-sided"
  *			is irrespective of the memory devices being mounted
  *			on both sides of the memory stick.
  *
@@ -243,10 +312,22 @@ enum scrub_type {
  * PS - I enjoyed writing all that about as much as you enjoyed reading it.
  */
 
-struct channel_info {
-	int chan_idx;		/* channel index */
-	u32 ce_count;		/* Correctable Errors for this CHANNEL */
-	char label[EDAC_MC_LABEL_LEN + 1];	/* DIMM label on motherboard */
+/**
+ * struct rank_info - contains the information for one DIMM rank
+ *
+ * @chan_idx:	channel number where the rank is (typically, 0 or 1)
+ * @ce_count:	number of correctable errors for this rank
+ * @label:	DIMM label. Different ranks for the same DIMM should be
+ *		filled, on userspace, with the same label.
+ *		FIXME: The core currently won't enforce it.
+ * @csrow:	A pointer to the chip select row structure (the parent
+ *		structure). The location of the rank is given by
+ *		the (csrow->csrow_idx, chan_idx) vector.
+ */
+struct rank_info {
+	int chan_idx;
+	u32 ce_count;
+	char label[EDAC_MC_LABEL_LEN + 1];
 	struct csrow_info *csrow;	/* the parent */
 };
 
@@ -270,7 +351,7 @@ struct csrow_info {
 
 	/* channel information for this csrow */
 	u32 nr_channels;
-	struct channel_info *channels;
+	struct rank_info *channels;
 };
 
 struct mcidev_sysfs_group {