diff options
| -rw-r--r-- | drivers/mtd/nand/nand_ids.c | 165 | ||||
| -rw-r--r-- | include/linux/mtd/nand.h | 4 |
2 files changed, 92 insertions, 77 deletions
diff --git a/drivers/mtd/nand/nand_ids.c b/drivers/mtd/nand/nand_ids.c index a9d52fc6e5d..2e2cdf2fc91 100644 --- a/drivers/mtd/nand/nand_ids.c +++ b/drivers/mtd/nand/nand_ids.c @@ -18,99 +18,110 @@ * Name. ID code, pagesize, chipsize in MegaByte, eraseblock size, * options * -* Pagesize; 0, 256, 512 -* 0 get this information from the extended chip ID +* Pagesize; 0, 256, 512 +* 0 get this information from the extended chip ID + 256 256 Byte page size * 512 512 Byte page size */ struct nand_flash_dev nand_flash_ids[] = { - {"NAND 1MiB 5V 8-bit", 0x6e, 256, 1, 0x1000, 0}, - {"NAND 2MiB 5V 8-bit", 0x64, 256, 2, 0x1000, 0}, - {"NAND 4MiB 5V 8-bit", 0x6b, 512, 4, 0x2000, 0}, - {"NAND 1MiB 3,3V 8-bit", 0xe8, 256, 1, 0x1000, 0}, - {"NAND 1MiB 3,3V 8-bit", 0xec, 256, 1, 0x1000, 0}, - {"NAND 2MiB 3,3V 8-bit", 0xea, 256, 2, 0x1000, 0}, - {"NAND 4MiB 3,3V 8-bit", 0xd5, 512, 4, 0x2000, 0}, - {"NAND 4MiB 3,3V 8-bit", 0xe3, 512, 4, 0x2000, 0}, - {"NAND 4MiB 3,3V 8-bit", 0xe5, 512, 4, 0x2000, 0}, - {"NAND 8MiB 3,3V 8-bit", 0xd6, 512, 8, 0x2000, 0}, - - {"NAND 8MiB 1,8V 8-bit", 0x39, 512, 8, 0x2000, 0}, - {"NAND 8MiB 3,3V 8-bit", 0xe6, 512, 8, 0x2000, 0}, - {"NAND 8MiB 1,8V 16-bit", 0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16}, - {"NAND 8MiB 3,3V 16-bit", 0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16}, - - {"NAND 16MiB 1,8V 8-bit", 0x33, 512, 16, 0x4000, 0}, - {"NAND 16MiB 3,3V 8-bit", 0x73, 512, 16, 0x4000, 0}, - {"NAND 16MiB 1,8V 16-bit", 0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16}, - {"NAND 16MiB 3,3V 16-bit", 0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16}, - - {"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0}, - {"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0}, - {"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16}, - {"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16}, - - {"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0}, - {"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0}, - {"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16}, - {"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16}, - - {"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0}, - {"NAND 128MiB 1,8V 8-bit", 0x39, 512, 128, 0x4000, 0}, - {"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0}, - {"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16}, - {"NAND 128MiB 1,8V 16-bit", 0x49, 512, 128, 0x4000, NAND_BUSWIDTH_16}, - {"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16}, - {"NAND 128MiB 3,3V 16-bit", 0x59, 512, 128, 0x4000, NAND_BUSWIDTH_16}, - - {"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0}, - - /* These are the new chips with large page size. The pagesize - * and the erasesize is determined from the extended id bytes - */ + {"NAND 1MiB 5V 8-bit", 0x6e, 256, 1, 0x1000, 0}, + {"NAND 2MiB 5V 8-bit", 0x64, 256, 2, 0x1000, 0}, + {"NAND 4MiB 5V 8-bit", 0x6b, 512, 4, 0x2000, 0}, + {"NAND 1MiB 3,3V 8-bit", 0xe8, 256, 1, 0x1000, 0}, + {"NAND 1MiB 3,3V 8-bit", 0xec, 256, 1, 0x1000, 0}, + {"NAND 2MiB 3,3V 8-bit", 0xea, 256, 2, 0x1000, 0}, + {"NAND 4MiB 3,3V 8-bit", 0xd5, 512, 4, 0x2000, 0}, + {"NAND 4MiB 3,3V 8-bit", 0xe3, 512, 4, 0x2000, 0}, + {"NAND 4MiB 3,3V 8-bit", 0xe5, 512, 4, 0x2000, 0}, + {"NAND 8MiB 3,3V 8-bit", 0xd6, 512, 8, 0x2000, 0}, + + {"NAND 8MiB 1,8V 8-bit", 0x39, 512, 8, 0x2000, 0}, + {"NAND 8MiB 3,3V 8-bit", 0xe6, 512, 8, 0x2000, 0}, + {"NAND 8MiB 1,8V 16-bit", 0x49, 512, 8, 0x2000, NAND_BUSWIDTH_16}, + {"NAND 8MiB 3,3V 16-bit", 0x59, 512, 8, 0x2000, NAND_BUSWIDTH_16}, + + {"NAND 16MiB 1,8V 8-bit", 0x33, 512, 16, 0x4000, 0}, + {"NAND 16MiB 3,3V 8-bit", 0x73, 512, 16, 0x4000, 0}, + {"NAND 16MiB 1,8V 16-bit", 0x43, 512, 16, 0x4000, NAND_BUSWIDTH_16}, + {"NAND 16MiB 3,3V 16-bit", 0x53, 512, 16, 0x4000, NAND_BUSWIDTH_16}, + + {"NAND 32MiB 1,8V 8-bit", 0x35, 512, 32, 0x4000, 0}, + {"NAND 32MiB 3,3V 8-bit", 0x75, 512, 32, 0x4000, 0}, + {"NAND 32MiB 1,8V 16-bit", 0x45, 512, 32, 0x4000, NAND_BUSWIDTH_16}, + {"NAND 32MiB 3,3V 16-bit", 0x55, 512, 32, 0x4000, NAND_BUSWIDTH_16}, + + {"NAND 64MiB 1,8V 8-bit", 0x36, 512, 64, 0x4000, 0}, + {"NAND 64MiB 3,3V 8-bit", 0x76, 512, 64, 0x4000, 0}, + {"NAND 64MiB 1,8V 16-bit", 0x46, 512, 64, 0x4000, NAND_BUSWIDTH_16}, + {"NAND 64MiB 3,3V 16-bit", 0x56, 512, 64, 0x4000, NAND_BUSWIDTH_16}, + + {"NAND 128MiB 1,8V 8-bit", 0x78, 512, 128, 0x4000, 0}, + {"NAND 128MiB 1,8V 8-bit", 0x39, 512, 128, 0x4000, 0}, + {"NAND 128MiB 3,3V 8-bit", 0x79, 512, 128, 0x4000, 0}, + {"NAND 128MiB 1,8V 16-bit", 0x72, 512, 128, 0x4000, NAND_BUSWIDTH_16}, + {"NAND 128MiB 1,8V 16-bit", 0x49, 512, 128, 0x4000, NAND_BUSWIDTH_16}, + {"NAND 128MiB 3,3V 16-bit", 0x74, 512, 128, 0x4000, NAND_BUSWIDTH_16}, + {"NAND 128MiB 3,3V 16-bit", 0x59, 512, 128, 0x4000, NAND_BUSWIDTH_16}, + + {"NAND 256MiB 3,3V 8-bit", 0x71, 512, 256, 0x4000, 0}, + + /* + * These are the new chips with large page size. The pagesize and the + * erasesize is determined from the extended id bytes + */ +#define LP_OPTIONS (NAND_SAMSUNG_LP_OPTIONS | NAND_NO_READRDY | NAND_NO_AUTOINCR) +#define LP_OPTIONS16 (LP_OPTIONS | NAND_BUSWIDTH_16) + /*512 Megabit */ - {"NAND 64MiB 1,8V 8-bit", 0xA2, 0, 64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 64MiB 3,3V 8-bit", 0xF2, 0, 64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 64MiB 1,8V 16-bit", 0xB2, 0, 64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - {"NAND 64MiB 3,3V 16-bit", 0xC2, 0, 64, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, + {"NAND 64MiB 1,8V 8-bit", 0xA2, 0, 64, 0, LP_OPTIONS}, + {"NAND 64MiB 3,3V 8-bit", 0xF2, 0, 64, 0, LP_OPTIONS}, + {"NAND 64MiB 1,8V 16-bit", 0xB2, 0, 64, 0, LP_OPTIONS16}, + {"NAND 64MiB 3,3V 16-bit", 0xC2, 0, 64, 0, LP_OPTIONS16}, /* 1 Gigabit */ - {"NAND 128MiB 1,8V 8-bit", 0xA1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 128MiB 3,3V 8-bit", 0xF1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 128MiB 1,8V 16-bit", 0xB1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - {"NAND 128MiB 3,3V 16-bit", 0xC1, 0, 128, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, + {"NAND 128MiB 1,8V 8-bit", 0xA1, 0, 128, 0, LP_OPTIONS}, + {"NAND 128MiB 3,3V 8-bit", 0xF1, 0, 128, 0, LP_OPTIONS}, + {"NAND 128MiB 1,8V 16-bit", 0xB1, 0, 128, 0, LP_OPTIONS16}, + {"NAND 128MiB 3,3V 16-bit", 0xC1, 0, 128, 0, LP_OPTIONS16}, /* 2 Gigabit */ - {"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - {"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, + {"NAND 256MiB 1,8V 8-bit", 0xAA, 0, 256, 0, LP_OPTIONS}, + {"NAND 256MiB 3,3V 8-bit", 0xDA, 0, 256, 0, LP_OPTIONS}, + {"NAND 256MiB 1,8V 16-bit", 0xBA, 0, 256, 0, LP_OPTIONS16}, + {"NAND 256MiB 3,3V 16-bit", 0xCA, 0, 256, 0, LP_OPTIONS16}, /* 4 Gigabit */ - {"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - {"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, + {"NAND 512MiB 1,8V 8-bit", 0xAC, 0, 512, 0, LP_OPTIONS}, + {"NAND 512MiB 3,3V 8-bit", 0xDC, 0, 512, 0, LP_OPTIONS}, + {"NAND 512MiB 1,8V 16-bit", 0xBC, 0, 512, 0, LP_OPTIONS16}, + {"NAND 512MiB 3,3V 16-bit", 0xCC, 0, 512, 0, LP_OPTIONS16}, /* 8 Gigabit */ - {"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 1GiB 1,8V 16-bit", 0xB3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - {"NAND 1GiB 3,3V 16-bit", 0xC3, 0, 1024, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, + {"NAND 1GiB 1,8V 8-bit", 0xA3, 0, 1024, 0, LP_OPTIONS}, + {"NAND 1GiB 3,3V 8-bit", 0xD3, 0, 1024, 0, LP_OPTIONS}, + {"NAND 1GiB 1,8V 16-bit", 0xB3, 0, 1024, 0, LP_OPTIONS16}, + {"NAND 1GiB 3,3V 16-bit", 0xC3, 0, 1024, 0, LP_OPTIONS16}, /* 16 Gigabit */ - {"NAND 2GiB 1,8V 8-bit", 0xA5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 2GiB 3,3V 8-bit", 0xD5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_NO_AUTOINCR}, - {"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - {"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, NAND_SAMSUNG_LP_OPTIONS | NAND_BUSWIDTH_16 | NAND_NO_AUTOINCR}, - - /* Renesas AND 1 Gigabit. Those chips do not support extended id and have a strange page/block layout ! - * The chosen minimum erasesize is 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page planes - * 1 block = 2 pages, but due to plane arrangement the blocks 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7 - * Anyway JFFS2 would increase the eraseblock size so we chose a combined one which can be erased in one go - * There are more speed improvements for reads and writes possible, but not implemented now + {"NAND 2GiB 1,8V 8-bit", 0xA5, 0, 2048, 0, LP_OPTIONS}, + {"NAND 2GiB 3,3V 8-bit", 0xD5, 0, 2048, 0, LP_OPTIONS}, + {"NAND 2GiB 1,8V 16-bit", 0xB5, 0, 2048, 0, LP_OPTIONS16}, + {"NAND 2GiB 3,3V 16-bit", 0xC5, 0, 2048, 0, LP_OPTIONS16}, + + /* + * Renesas AND 1 Gigabit. Those chips do not support extended id and + * have a strange page/block layout ! The chosen minimum erasesize is + * 4 * 2 * 2048 = 16384 Byte, as those chips have an array of 4 page + * planes 1 block = 2 pages, but due to plane arrangement the blocks + * 0-3 consists of page 0 + 4,1 + 5, 2 + 6, 3 + 7 Anyway JFFS2 would + * increase the eraseblock size so we chose a combined one which can be + * erased in one go There are more speed improvements for reads and + * writes possible, but not implemented now */ - {"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000, NAND_IS_AND | NAND_NO_AUTOINCR | NAND_4PAGE_ARRAY | BBT_AUTO_REFRESH}, + {"AND 128MiB 3,3V 8-bit", 0x01, 2048, 128, 0x4000, + NAND_IS_AND | NAND_NO_AUTOINCR |NAND_NO_READRDY | NAND_4PAGE_ARRAY | + BBT_AUTO_REFRESH + }, {NULL,} }; diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h index 2c0fb638046..2fd85d55803 100644 --- a/include/linux/mtd/nand.h +++ b/include/linux/mtd/nand.h @@ -159,6 +159,10 @@ typedef enum { * bits from adjacent blocks from 'leaking' in altering data. * This happens with the Renesas AG-AND chips, possibly others. */ #define BBT_AUTO_REFRESH 0x00000080 +/* Chip does not require ready check on read. True + * for all large page devices, as they do not support + * autoincrement.*/ +#define NAND_NO_READRDY 0x00000100 /* Options valid for Samsung large page devices */ #define NAND_SAMSUNG_LP_OPTIONS \ |