diff options
Diffstat (limited to 'drivers/mtd')
| -rw-r--r-- | drivers/mtd/nand/nand_base.c | 15 | ||||
| -rw-r--r-- | drivers/mtd/nand/nand_bbt.c | 3 |
2 files changed, 18 insertions, 0 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index 85891dcc27a..4a7b86423ee 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -347,6 +347,9 @@ static int nand_block_bad(struct mtd_info *mtd, loff_t ofs, int getchip) struct nand_chip *chip = mtd->priv; u16 bad; + if (chip->options & NAND_BB_LAST_PAGE) + ofs += mtd->erasesize - mtd->writesize; + page = (int)(ofs >> chip->page_shift) & chip->pagemask; if (getchip) { @@ -396,6 +399,9 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs) uint8_t buf[2] = { 0, 0 }; int block, ret; + if (chip->options & NAND_BB_LAST_PAGE) + ofs += mtd->erasesize - mtd->writesize; + /* Get block number */ block = (int)(ofs >> chip->bbt_erase_shift); if (chip->bbt) @@ -2933,6 +2939,15 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, if (*maf_id != NAND_MFR_SAMSUNG && !type->pagesize) chip->options &= ~NAND_SAMSUNG_LP_OPTIONS; + /* + * Bad block marker is stored in the last page of each block + * on Samsung and Hynix MLC devices + */ + if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) && + (*maf_id == NAND_MFR_SAMSUNG || + *maf_id == NAND_MFR_HYNIX)) + chip->options |= NAND_BB_LAST_PAGE; + /* Check for AND chips with 4 page planes */ if (chip->options & NAND_4PAGE_ARRAY) chip->erase_cmd = multi_erase_cmd; diff --git a/drivers/mtd/nand/nand_bbt.c b/drivers/mtd/nand/nand_bbt.c index 387c45c366f..ad97c0ce73b 100644 --- a/drivers/mtd/nand/nand_bbt.c +++ b/drivers/mtd/nand/nand_bbt.c @@ -432,6 +432,9 @@ static int create_bbt(struct mtd_info *mtd, uint8_t *buf, from = (loff_t)startblock << (this->bbt_erase_shift - 1); } + if (this->options & NAND_BB_LAST_PAGE) + from += mtd->erasesize - (mtd->writesize * len); + for (i = startblock; i < numblocks;) { int ret; |